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Analogue Electronics 1

Unit Code: HET287




Duration

Contact Hours

Campus

Prerequisite

Corequisite

1 Semester

66 Hours

Hawthorn

Nil

Credit Points: 12.5 Credit Points

Related Course/s:

A unit of study in the Bachelor of Engineering (Biomedical Engineering), Bachelor of Engineering (Electrical and Electronic Engineering), Bachelor of Engineering (Electrical and Electronic Engineering) / Bachelor of Commerce, Bachelor of Engineering (Electronics and Computer Systems), Bachelor of Engineering (Electronics and Computer Systems)/ Bachelor of Science (Computer Science and Software Engineering), Bachelor of Engineering (Electronics and Computer Systems)/ Bachelor of Commerce, Bachelor of Engineering (Telecommunication and Network Engineering) / Bachelor of Science (Computer Science and Software Engineering) ( I069), Bachelor of Engineering (Telecommunication and Network Engineering) and the Bachelor of Engineering (Electronics and Computer Systems) / Bachelor of Science (Biomedical Sciences)

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Aims & Objectives:

To introduce the students to the theory, analysis, and operation of solid state devices including Diodes, BJT,JFET, MOSFET and CMOS transistors.

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Teaching Methods:

Lectures (48 hrs), tutorials (8 hrs), and Laboratory Work (10 hrs).

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Assessment:

Laboratories (30%), Examination (70%).

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Generic Skills Outcomes:

In this unit, students are expected to enhance the Key Generic Skills below as recognised by Engineers Australia. The Unit Outline explains how these outcomes will be achieved.
 
  • Ability to apply knowledge of basic science and engineering fundamentals
  • Ability to communicate effectively, not only with engineers but also with the community at large
  • Ability to undertake problem identification, formulation and solution
  • Ability to function effectively as an individual and in a multi-disciplinary and multi-cultural teams, with the capacity to be a leader or manager as well as an effective team member

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Content:

  • Semiconductor device principles: A very brief introduction to the physical principles of semiconductor electronic devices
  • Diodes and diode circuits: Junction diodes and their i - v characteristics. Diode models and diode circuits. small signal model and its applications, operation in reverse breakdown region –Zener diodes, rectifier circuits, limiting and clamping circuits, Unregulated power supplies
  • Bipolar Junction Transistors (BJTs): Device structure and physical operation, DC analysis of BJT circuits. transistor biasing and small signal model
  • Basic configurations of single-transistor amplifier circuits
  • Multi-stage amplifier circuits
  • Field Effect Transistors (FETs): Device structure and physical operation of FETs, MOSFETs and CMOS technology. DC analysis, biasing, small signal model, and amplifier circuits
  • Frequency characteristics of transistor-based amplifiers
  • Computer-aided analysis of analogue circuits using the PSPICE program

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Textbooks:

Neamen, D. A. “Microelectronics - Circuit analysis and design”, 3rd Edition, McGraw Hill.

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References:

A. S. Sedra, K. C. Smith, “Microelectronic Circuits”, 5th Edition, Oxford University Press 2004.
A. R. Hambley, "Electronics - A top-down approach to computer-aided circuit design." Prentice-Hall.
P. R. Gray, R. G. Meyer, “Analysis and Design of Analog Integrated Circuits”, John Wiley.
M. N. Horenstein, "Microelectronic circuits and devices", Prentice Hall 1996.

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